Datasheet Summary
FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 36 A, 24 mΩ
March 2015
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A
- Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Very low Qg and Qgd pared to peting trench technologies
- Fast switching speed
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been...
