FDD86102 Overview
Key Specifications
Package: TO-252
Mount Type: Surface Mount
Pins: 3
Height: 2.517 mm
Description
Shielded Gate MOSFET Technology - Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A - Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A - High performance trench technology for extremely low rDS(on) - High power and current handling capability in a widely used surface mount package - Very low Qg and Qgd compared to competing trench technologies - Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
