FDD86102LZ Overview
Shielded Gate MOSFET Technology Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd pared to peting trench technologies Fast switching speed 100% UIL tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded...
FDD86102LZ Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
- Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
- HBM ESD protection level > 6 kV typical (Note 4)
- Very low Qg and Qgd pared to peting trench
- Fast switching speed
- 100% UIL tested
- RoHS pliant
