Datasheet Summary
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 35 A, 22.5 mΩ
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
- Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
- HBM ESD protection level > 6 kV typical (Note 4)
- Very low Qg and Qgd pared to peting trench technologies
- Fast switching speed
- 100% UIL tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss....
