FDD86102LZ Overview
Key Specifications
Package: DPAK
Mount Type: Surface Mount
Pins: 3
Height: 2.517 mm
Description
Shielded Gate MOSFET Technology - Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A - Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A - HBM ESD protection level > 6 kV typical (Note 4) - Very low Qg and Qgd compared to competing trench technologies - Fast switching speed - 100% UIL tested - RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss.
