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FDD86110 - N-Channel MOSFET

Description

Shielded Gate MOSFET Technology Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Sh

Features

  • General.

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FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 50 A, 10.2 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A „ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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