Datasheet Summary
FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 5.5 A, 104 mΩ
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A
- Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A
- HBM ESD protection level > 6 kV typical (Note 4)
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
- High...