FDD86113LZ
Description
Shielded Gate MOSFET Technology Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
