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FDD86113LZ - N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s ad

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A „ Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A „ HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.