Datasheet Summary
FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 50 A, 10.2 mΩ
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A
- Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A
- 100% UIL tested
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
- RoHS pliant
Application
- DC
- DC Conversion
DT O-P-2A5K2 (T O -25 2)
MOSFET Maximum Ratings TC = 25...