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FDD8750 Key Features

  • Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A
  • Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A
  • Low gate charge: Qg(10) = 6nC(Typ)
  • Low gate resistance
  • Avalanche rated and 100% tested
  • RoHS pliant
  • Low current DC-DC switching
  • Linear regulation
  • 55 to +175

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FDD8750 Description

„ Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A „ Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A „ Low gate charge: Qg(10) = 6nC(Typ) „ Low gate resistance „ Avalanche rated and 100% tested „ RoHS pliant This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low...