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Fairchild Semiconductor Electronic Components Datasheet

FDD8750 Datasheet

N-Channel MOSFET

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December 2006
FDD8750
N-Channel PowerTrench® MOSFET
25V, 2.7A, 40m
Features
General Description
tm
„ Max rDS(on) = 40mat VGS = 10V, ID = 2.7A
„ Max rDS(on) = 60mat VGS = 4.5V, ID = 2.7A
„ Low gate charge: Qg(10) = 6nC(Typ)
„ Low gate resistance
„ Avalanche rated and 100% tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall effciency of DC/DC converters using either
synchronous or conventional switching PWM controllers.It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Application
„ Low current DC-DC switching
„ Linear regulation
D
G
S
D
DT O- P-2A5K2
(T O -25 2)
www.DataSheet4U.com
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package Limited)
-Continuous(Silicon Limited)
-Continuous
-Pulsed
TC= 25°C
TC= 25°C
TA= 25°C
EAS Drain-Source Avalanche Energy
PD
Power Dissipation
Power Dissipation
TC= 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1)
(Note 1a)
(Note 3)
(Note 1a)
S
Ratings
25
±20
2.7
16
6.5
14
19
18
3.7
–55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
8
40
°C/W
Device Marking
FDD8750
Device
FDD8750
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDD8750 Rev.C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD8750 Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
25
V
ID = 250µA, referenced to 25°C
18 mV/°C
VDS =20V, VGS = 0V
TJ=150°C
VGS = ±20V, VGS = 0V
1
250
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
VGS = VDS, ID = 250µA
1.2 2.0 2.5
V
ID = 250µA, referenced to 25°C
-5 mV/°C
VGS = 10V, ID = 2.7A
VGS = 4.5V, ID = 2.7A
VGS = 10V, ID = 2.7A, TJ=150°C
28 40
39 60 m
44 63
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13V, VGS = 0V,
f = 1MHz
f = 1MHz
320 425
80 110
50 75
1.8
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg(5)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 13V, ID = 2.7A
VGS = 10V, RGEN = 6
VGS = 0V to 10V
VGS = 0V to 5V
VDD =13V
ID = 2.7A
3 10 ns
12 22 ns
8 16 ns
5 10 ns
6 9 nC
3.4 5 nC
1.1 nC
1.2 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.7A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 2.7A, di/dt = 100A/µs
0.8 1.6
V
16 24 ns
7 11 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper;
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 3.6A, VDD = 25V, VGS = 10V.
FDD8750 Rev.C
2 www.fairchildsemi.com


Part Number FDD8750
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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