Datasheet Details
| Part number | FDD8750 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 364.65 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDD8750_FairchildSemiconductor.pdf |
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Overview: FDD8750 N-Channel PowerTrench® MOSFET December 2006 FDD8750 N-Channel PowerTrench® MOSFET tm 25V, 2.
| Part number | FDD8750 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 364.65 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDD8750_FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A Low gate charge: Qg(10) = 6nC(Typ) Low gate resistance Avalanche rated and 100% tested RoHS pliant This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Application Low current DC-DC switching Linear regulation D D G S G DT O- P-2A5K2 (T O -25 2) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous(Package Limited) -Continuous(Silicon Limited) -Continuous -Pulsed TC= 25°C TC= 25°C TA= 25°C Drain-Source Avalanche Energy Power Dissipation Power Dissipation TC= 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1) (Note 1a) (Note 3) (Note 1a) S Ratings 25 ±20 2.7 16 6.5 14 19 18 3.7 –55 to +175 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 8 (Note 1a) 40 °C/W Device Marking FDD8750 Device FDD8750 Package D-PAK(TO-252) Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation 1 FDD8750 Rev.C .fairchildsemi.
FDD8750 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V 25 V ID = 250µA, referenc
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