FDD8770 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
FDD8770 Key Features
- Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A
- Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A
- Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V
- Low gate resistance
- RoHS pliant
- Vcore DC-DC for Desktop puters and Servers
- VRM for Intermediate Bus Architecture
- Continuous (Die Limited)
- Pulsed
- 55 to 175