FDG8850NZ Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDG8850NZ Dual N-Channel PowerTrench® MOSFET April 2007 FDG8850NZ Dual N-Channel PowerTrench® MOSFET tm 30V,0.75A,0.

Datasheet Details

Part number	FDG8850NZ
Manufacturer	Fairchild (now onsemi)
File Size	327.66 KB
Description	MOSFET
Datasheet	FDG8850NZ-FairchildSemiconductor.pdf

General Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Key Features

Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A.
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A.
Very low level gate drive requirements allowing operation in 3V circuits(VGS(th).

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Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	FDG8850NZ	Dual N-Channel MOSFET	ON Semiconductor

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