FDG8850NZ mosfet equivalent, mosfet.
* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
* Very low level gate drive requirements allowing operation
in 3.
as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this d.
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