FDG8850NZ Overview
This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
FDG8850NZ Key Features
- Max RDS(on) = 0.4 W at VGS = 4.5 V, ID = 0.75 A
- Max RDS(on) = 0.5 W at VGS = 2.7 V, ID = 0.67 A
- Very Low Level Gate Drive Requirements Allowing Operation
- Very Small Package Outline SC-70 6 Lead
- This Device is Pb-Free, Halide Free and is RoHS pliant
- Rev. 2
