FDG8850NZ Overview
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
FDG8850NZ Key Features
- Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
- Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
- Very low level gate drive requirements allowing operation
- Very small package outline SC70-6
- RoHS pliant
