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FDH055N15A Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDH055N15A — N-Channel PowerTrench® MOSFET March 2015 FDH055N15A N-Channel PowerTrench® MOSFET 150 V, 167 A, 5.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Sever / Tele PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter G D S TO-247 Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage - DC - AC (f > 1 Hz) Drain Current - Continuou

Key Features

  • RDS(on) = 4.8 mΩ (Typ. ) @ VGS = 10 V, ID = 120 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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