FDI047AN08A0 Datasheet | Fairchild Semiconductor

Features - r DS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A - Qg(tot) = 92n C (Typ.), VGS = 10V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 Formerly developmental type 82684 Applications - 42V Automotive Load Control - Starter / Alternator Systems - Electronic Power Steering Systems - Electronic Valve Train Systems - DC-DC converters and Off-line UPS - Distributed Power Architectures and VRMs - Primary Switch for 24V and 48V systems DRAIN (FLANGE) SOURCE DRAIN SOURCE DRAIN GATE GATE SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) TO-220AB FDP SERIES TO-262AB FDI SERIES TO-247 FDH SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 144o C, VGS = 10V) Continuous (TC = 25o C, VGS = 10V, with RθJA = 62o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature 80 15 Figure 4 475 310 2.0 -55 to 175 A A A m J W W/o C o Ratings 75 ±20 Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-262, TO-247 Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) Thermal Resistance Junction to Ambient TO-247 (Note 2) 0.48 62 30 o C/W o o C/W C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://.aecouncil./ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 Fairchild Semiconductor Corporation FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C FDP047AN08A0 / FDI047AN08A0 /...