FDI33N25
Description
May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
- Low gate charge ( typical 36.8 nC)
- Low Crss ( typical 39 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability UniFET
