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FDI33N25 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V.
  • Low gate charge ( typical 36.8 nC).
  • Low Crss ( typical 39 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability UniFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB33N25 / FDI33N25 250V N-Channel MOSFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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