* 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
* Low gate charge ( typical 36.8 nC)
* Low Crss ( typical 39 pF)
* Fast switching
* 100% avalanche tested

May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide .

FDI3632

FDI3652

FDI025N06

FDI030N06

FDI036N10A

FDI038AN06A0

FDI040N06

FDI045N10A

FDI047AN08A0

FDI150N10

FDI2532

FDI8441

FDI8441_F085