FDI33N25 Key Features
- 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
- Low gate charge ( typical 36.8 nC)
- Low Crss ( typical 39 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: FDI33N25
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 870.53 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FDI3632 | N-Channel MOSFET |
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| FDI030N06 | N-Channel MOSFET |
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