FDM3300NZ Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package.
FDM3300NZ Key Features
- 10 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V
- > 2000v ESD Protection
- Low Profile
- 1mm maximum
- in the new package MicroFET 3.3x3.3 mm