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Fairchild Semiconductor Electronic Components Datasheet

FDM3300NZ Datasheet

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

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February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench 
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
Li-Ion Battery Pack
Features
10 A, 20 V
RDS(ON) = 23 m@ VGS = 4.5 V
RDS(ON) = 28 m@ VGS = 2.5 V
> 2000v ESD Protection
Low Profile – 1mm maximum – in the new package
MicroFET 3.3x3.3 mm
D2 DD22
D1
D1
S1 G1 S2 G2
MicroFET
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
3300N
FDM3300NZ
7’’
1
2
3
4
Ratings
20
±12
10
40
2.5
1.2
–55 to +150
52
108
5
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDM3300NZ Rev. E3 (W)


Fairchild Semiconductor Electronic Components Datasheet

FDM3300NZ Datasheet

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage,
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
Gate Threshold Voltage
TJ Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 10A
VGS = 2.5 V, ID = 9 A
VGS = 4.5 V, ID = 10A, TJ=125°C
VGS = 2.5 V, VDS = 5 V
VDS = 5 V,
ID =10 A
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
V GS = 0 V,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6
VDS = 10 V,
VGS = 4.5 V
ID = 10 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2 A
(Note 2)
Voltage
trr Diode Reverse Recovery Time IF = 10 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
20 V
10.7
mV/°C
1 µA
±10 µA
0.6 0.9 1.5
V
–3 mV/°C
16 23
20 28
22 31
10
35
m
A
S
1210
330
180
2.3
pF
pF
pF
10 20
14 25
26 42
13 23
12 17
2
4
2
0.7 1.2
20
6
ns
ns
ns
ns
nC
nC
nC
A
V
nS
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC are guaranteed by design while RθJA is
determined by the user's board design.
(a). RθJA = 52°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b). RθJA = 108°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDM3300NZ Rev E3 (W)


Part Number FDM3300NZ
Description Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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