FDM3622 Datasheet | Fairchild Semiconductor

Features r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13n C (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Formerly developmental type 82744 1 2 3 4 8 7 6 5 Micro FET 3.3 x 3.3 ©2005 Fairchild Semiconductor Corporation FDM3622 Rev. A .fairchildsemi. FDM3622 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25 o C, VGS = 10V, Rθ JA = 52o C/W) Continuous (TC = 25 C, VGS = 6V, Rθ JA = 52 C/W) Continuous (TC = 100o C, VGS = 10V, RθJA = 52o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25o C Operating and Storage Temperature o o Ratings 100 ±20 4.4 3.8 2.8 Figure 4 190 2.4 19 -55 to 150 Units V V A A A m J W m W/o C o Thermal Characteristics Rθ JA Rθ JA Rθ JC Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Ambient (Note 1b) Thermal Resistance Junction to Case (Note 1) 52 108 1.8 o C/W o o C/W C/W Package Marking and Ordering Information Device Marking FDM3622 Device FDM3622 Package Micro FET3.3x3.3 Reel Size 7” Tape Width 12mm Quantity 3000 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 80V VGS = 0V VGS = ±20V TC = 100o C 100 1...