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FDM3622 - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A.
  • Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • Optimized efficiency at high frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant MOSFET.

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Datasheet Details

Part number FDM3622
Manufacturer onsemi
File Size 163.71 KB
Description N-Channel MOSFET
Datasheet download datasheet FDM3622 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 100 V, 4.4 A, 60 mW FDM3622 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features • Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A • Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.