Description
This N
Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A.
- Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A.
- Low Miller Charge.
- Low QRR Body Diode.
- Optimized efficiency at high frequencies.
- UIS Capability (Single Pulse and Repetitive Pulse).
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant
MOSFET.
FDM3622 Datasheet
