Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
100 V, 4.4 A, 60 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.
Features
- Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A
- Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A
- Low Miller Charge
- Low QRR Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb- Free, Halide Free and is RoHS pliant
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS...
