FDM3622 Datasheet and Specifications PDF

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switch.

* Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A
* Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A
* Low Miller Charge
* Low QRR Body Diode
* Optimized efficiency at high frequencies
* UIS Capability (Single Pulse and Repetitive Pulse)
* This Device is Pb
*Free, Halide Free and is RoHS Compliant MOSFE.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge fo.

r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanc.