FDM3622 Datasheet | Fairchild Semiconductor

FDM3622 N-Channel PowerTrench® MOSFET January 2005 FDM3622 N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ Features r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous...