FDMA1032CZ Datasheet | Fairchild Semiconductor

Description This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It - Q2: P-Channel - 3.1 A, - 20V. RDS(ON) = 95 mΩ @ VGS = - 4.5V RDS(ON) = 141 mΩ @ VGS = - 2.5V - Low profile - 0.8 mm maximum - in the new package Micro FET 2x2 mm - Ro HS pliant features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The Micro FET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications. PIN 1 S1 G1 D1 D2 D2 Features - Q1: N-Channel 3.7 A, 20V. RDS(ON) = 68 mΩ @ VGS = 4.5V RDS(ON) = 86 mΩ @ VGS = 2.5V S1 G1 1 2 3 6 5 4 D1 G2 S2 D1 G2 S2 Micro FET 2x2 D2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Q1 20 ±12 (Note 1a) Q2 - 20 ±12 - 3.1 - 6 1.4 0.7 - 55 to +150 Units V V A W °C 3.7 6 Power Dissipation for Single Operation (Note 1a) (Note...