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Fairchild Semiconductor Electronic Components Datasheet

FDMA1032CZ Datasheet

Complementary PowerTrench MOSFET

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May 2006
FDMA1032CZ
20V Complementary PowerTrench® MOSFET
General Description
This device is designed specifically as a single package
solution for a DC/DC 'Switching' MOSFET in cellular
handset and other ultra-portable applications. It
features an independent N-Channel & P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
PIN 1
S1 G1 D2
Features
Q1: N-Channel
3.7 A, 20V. RDS(ON) = 68 m@ VGS = 4.5V
RDS(ON) = 86 m@ VGS = 2.5V
Q2: P-Channel
–3.1 A, –20V. RDS(ON) = 95 m@ VGS = –4.5V
RDS(ON) = 141 m@ VGS = –2.5V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
D1 D2
D1 G2 S2
MicroFET 2x2
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
032
FDMA1032CZ
7’’
Q1 Q2
20 –20
±12 ±12
3.7 –3.1
6 –6
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
°C/W
Tape width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA1032CZ Rev B (W)


Fairchild Semiconductor Electronic Components Datasheet

FDMA1032CZ Datasheet

Complementary PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS Gate-Body Leakage
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 16 V,
VGS = 0 V
VDS = –16 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
Q1 20
Q2 –20
V
Q1 15 mV/°C
Q2 –12
Q1 1 µA
Q2 –1
All ±10 µA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
VDS = VGS,
VDS = VGS,
ID = 250 µA
ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 3.7 A
VGS = 2.5 V, ID = 3.3 A
VGS = 4.5 V, ID = 3.7 A, TJ = 125°C
VGS = –4.5V, ID = –3.1 A
VGS = –2.5 V, ID = –2.5 A
VGS = –4.5 V, ID = –3.1 A,TJ = 125°C
VDS = 10 V,
ID = 3.7 A
VDS = –10 V,
ID = –3.1 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Q2
VDS = –10 V, VGS = 0 V, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
0.6
–0.6
1.0
–1.0
–4
4
1.5 V
–1.5
mV/°C
37 68 m
50 86
53 90
60 95
88 141
87 140
16
–11
m
S
340 pF
540
80 pF
120
60 pF
100
FDMA1032CZ Rev B (W)


Part Number FDMA1032CZ
Description Complementary PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
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