Datasheet Summary
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FDMA1032CZ 20V plementary PowerTrench® MOSFET
May 2006
20V plementary PowerTrench® MOSFET
General Description
This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It
- Q2: P-Channel
- 3.1 A,
- 20V. RDS(ON) = 95 mΩ @ VGS =
- 4.5V RDS(ON) = 141 mΩ @ VGS =
- 2.5V
- Low profile
- 0.8 mm maximum
- in the new package MicroFET 2x2 mm
- RoHS pliant Features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications. PIN 1 S1 G1 D1 D2 D2
Features
- Q1: N-Channel 3.7 A, 20V. RDS(ON) = 68 mΩ @ VGS = 4.5V RDS(ON) = 86 mΩ @ VGS = 2.5V
S1 G1
1 2 3
6 5 4
D1 G2 S2
D1 G2 S2
MicroFET...