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FDMA1032CZ - Complementary PowerTrench MOSFET

Description

This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications.

Q2: P-Channel 3.1 A,

20V.

4.5V RDS(ON) = 141 mΩ @ VGS = 2.5V

Features

  • an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching.

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www.DataSheet4U.com FDMA1032CZ 20V Complementary PowerTrench® MOSFET May 2006 FDMA1032CZ 20V Complementary PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It • Q2: P-Channel –3.1 A, –20V. RDS(ON) = 95 mΩ @ VGS = –4.5V RDS(ON) = 141 mΩ @ VGS = –2.5V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm • RoHS Compliant features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.
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