FDMA1032CZ mosfet equivalent, complementary powertrench mosfet.
an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high fre.
It
* Q2: P-Channel
–3.1 A,
–20V. RDS(ON) = 95 mΩ @ VGS =
–4.5V RDS(.
This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It
* Q2: P-Channel
–3.1 A,
–20V. RDS(ON) = 95 mΩ @ VGS = <.
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