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FDMA2002NZ - Dual N-Channel PowerTrench MOSFET

Description

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications.

Features

  • two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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May 2006 May 2006 FDMA2002NZ Dual N-Channel PowerTrench® MOSFET FDMA2002NZ Dual N-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features • 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V RDS(ON) = 140 mΩ @ VGS = 3.0 V RDS(ON) = 163 mΩ @ VGS = 2.5 V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm • RoHS Compliant PIN 1 S1 G1 D1 D2 D2 S1 G1 D2 1 2 3 6 5 4 D1 G2 S2 D1 G2 S2 www.
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