Datasheet4U Logo Datasheet4U.com

FDMA430NZ - Single N-Channel 2.5V Specified PowerTrench MOSFET

Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.

Features

  • RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A.
  • RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A.
  • Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDMA430NZ

📁 Similar Datasheet

  • FDMA430NZ - N-Channel MOSFET (ON Semiconductor)
  • FDMA410NZ - N-Channel MOSFET (ON Semiconductor)
  • FDMA410NZT - N-Channel MOSFET (ON Semiconductor)
  • FDMA420NZ - N-Channel MOSFET (ON Semiconductor)
  • FDMA037N08LC - N-Channel MOSFET (ON Semiconductor)
  • FDMA1023PZ - Dual P-Channel MOSFET (ON Semiconductor)
  • FDMA1024NZ - Dual N-Channel MOSFET (ON Semiconductor)
  • FDMA1027P - Dual P-Channel MOSFET (ON Semiconductor)
  • FDMA1028NZ - Dual N-Channel Power MOSFET (ON Semiconductor)
  • FDMA1029PZ - Dual P-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET September 2006 FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. tm Features „ RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A „ RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A „ Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm „ RoHS Compliant Applications „ Li-lon Battery Pack Pin 1 D D G S D D 4 3 Drain www.DataSheet4U.
Published: |