FDMA430NZ Datasheet | onsemi

Description This Single N- Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.5 V on special Micro FETt leadframe. Features - RDS(on) = 40 m W at VGS = 4.5 V, ID = 5.0 A - RDS(on) = 50 m W at VGS = 2.5 V, ID = 4.5 A - Low Profile - 0.8 mm Maximum in the New Package Micro FET 2x2 mm - HBM ESD Protection Level > 2.5 k V Typical (Note 3) - Free from Halogenated pounds and Antimony Oxides - This Device is Pb- Free, Halide Free and is Ro HS pliant Applications - Li- lon Battery Pack ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGSS Drain- Source Voltage Gate- Source Voltage Drain Current - Continuous (Note 1a) - Pulsed ±12 A 5.0 20 PD Power Dissipation (Steady State) - (Note 1a) - (Note 1b) W 2.4 0.9 TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit Rq JA Thermal Resistance, Junction to...