FDMA430NZ Description
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
FDMA430NZ Key Features
- RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
- RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A
- Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm
- RoHS pliant