FDMA430NZ Datasheet | Fairchild Semiconductor

Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special Micro FET leadframe. tm Features - RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A - RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A - Low Profile-0.8mm maximum-in the new package Micro FET 2x2 mm - Ro HS pliant Applications - Li-lon Battery Pack Pin 1 4 3 Drain .. Source Bottom Drain Contact Micro FET 2X2 (Bottom View) Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±12 5.0 20 0.9 2.4 -55 to +150 Units V V A W o Power dissipation (Steady State) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 145 52 o C/W Package Marking and Ordering Information Device Marking 430 Device FDMA430NZ Reel Size 7” Tape Width 12mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMA430NZ Rev B1 .fairchildsemi. FDMA430NZ Single N-Channel 2.5V specified Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, VGS = 0V , ID = 250µA ID = 250µA, Referenced to 25°C VDS = 24V, VGS = 0V, VGS = ±12V, VDS = 0V 30 25.2 1 ±10 V m V/°C µA µA On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250µA ID = 250µA, Referenced to 25°C VGS = 4.5V, ID = 5.0A VGS = 4.0V, ID = 5.0A RDS(ON) Static Drain-Source On-Resistance VGS = 3.1V, ID =4.5A VGS = 2.5V, ID =4.5A VGS...