FDMA530PZ Datasheet | Fairchild Semiconductor

FDMA530PZ Single P-Channel Power Trench® MOSFET January 2007 Single P-Channel - 30V, - 6.8A, 35mΩ Features Power Trench® tm MOSFET General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It Features a MOSFET with low on-state resistance. The Micro FET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. - Max r DS(on) = 35mΩ at VGS = - 10V, ID = - 6.8A - Max r DS(on) = 65mΩ at VGS = - 4.5V, ID = - 5.0A - Low profile - 0.8mm maximum - in the new package Micro FET 2X2 mm - Ro HS pliant Pin 1 Bottom Drain Contact Drain Source .. Micro FET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings - 30 ±25 - 6.8 - 24 2.4...