FDMA6676PZ Datasheet | Fairchild Semiconductor

FDMA6676PZ Single P-Channel Power Trench® MOSFET February 2015 Single P-Channel Power Trench® MOSFET -30 V, -11 A, 13.5 mΩ Features - Max r DS(on) = 13.5 mΩ @ VGS = -10 V - 25V VGS Extended Operating Rating - 30V VDS Blocking - 2x2mm Form Factor - Low Profile - 0.8 mm maximum - Integrated Protection Diode - Ro HS pliant - Halogen Free General Description This device is an ultra low resistance P-Channel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25V. Typical end systems include laptop puters, tablets and mobile phone. Applications include battery protection, input power line protection and charge path protection, including USB and other charge paths. The FDMA6676PZ has an enhanced VGS rating of 25V specifically designed to simplify installation. When used as reverse polarity protection, with gate tied to ground and drain tied to V...