Datasheet4U Logo Datasheet4U.com

FDMA7632 - Single N-Channel Power MOSFET

Datasheet Summary

Description

Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm Free from halogenated compounds and antimony oxides RoHS compliant This device has been desig

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDMA7632

Datasheet Details

Part number FDMA7632
Manufacturer Fairchild Semiconductor
File Size 280.23 KB
Description Single N-Channel Power MOSFET
Datasheet download datasheet FDMA7632 Datasheet
Additional preview pages of the FDMA7632 datasheet.

📁 Similar Datasheet

  • FDMA7630 - N-Channel MOSFET (ON Semiconductor)
  • FDMA7672 - N-Channel MOSFET (ON Semiconductor)
  • FDMA037N08LC - N-Channel MOSFET (ON Semiconductor)
  • FDMA1023PZ - Dual P-Channel MOSFET (ON Semiconductor)
  • FDMA1024NZ - Dual N-Channel MOSFET (ON Semiconductor)
  • FDMA1027P - Dual P-Channel MOSFET (ON Semiconductor)
  • FDMA1028NZ - Dual N-Channel Power MOSFET (ON Semiconductor)
  • FDMA1029PZ - Dual P-Channel MOSFET (ON Semiconductor)
  • FDMA1032CZ - Dual-Channel MOSFET (ON Semiconductor)
  • FDMA2002NZ - Dual N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMA7632 Single N-Channel Power Trench® MOSFET FDMA7632 Single N-Channel PowerTrench® MOSFET May 2014 30 V, 9 A, 19 mΩ Features General Description „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7 A „ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ Free from halogenated compounds and antimony oxides „ RoHS compliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
Published: |