FDMA7630 Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 13 mΩ at VGS = 10 V, ID = 11 A - Max r DS(on) = 20 mΩ at VGS = 4.5 V, ID = 9 A - Low Profile - 0.8 mm maximum - in the new package Micro FET 2x2 mm - Free from halogenated pounds and antimony oxides - Ro HS pliant July 2012 General Description This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low r DS(on) and gate charge provide excellent switching performance. Application - DC - DC Buck Converters Pin 1 Bottom Drain Contact Drain Source D G S D D Micro FET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings 30 ±20 11 24 2.4 0.9 - 55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 630 Device FDMA7630 Package Micro FET 2x2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C3 .fairchildsemi. FDMA7630 Single N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 15 1 100 V m V/°C μA n A On Characteristics VGS(th) ΔVGS(th) ΔTJ r DS(on) g FS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source...