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FDMA7632 - Single N-Channel Power MOSFET

General Description

Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm Free from halogenated compounds and antimony oxides RoHS compliant This device has been desig

Key Features

  • General.

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FDMA7632 Single N-Channel Power Trench® MOSFET FDMA7632 Single N-Channel PowerTrench® MOSFET May 2014 30 V, 9 A, 19 mΩ Features General Description „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7 A „ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ Free from halogenated compounds and antimony oxides „ RoHS compliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.