FDMA86108LZ Datasheet | Fairchild Semiconductor

Features General Description Max r DS(on) = 243 mΩ at VGS = 10 V, ID = 2.2 A Max r DS(on) = 366 mΩ at VGS = 4.5 V, ID = 1.8 A Low Profile - 0.8 mm Maximum in the New Package Micro FET 2x2 mm Free from Halogenated pounds and Antimony Oxides Ro HS pliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low r DS(on) and gate charge provide excellent switching performance. Application - DC Buck Converters Pin 1 Drain DD G Source DD S Micro FET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter TA = 25 °C PD TJ, TSTG Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature...