FDMA86108LZ
FDMA86108LZ is N-Channel MOSFET manufactured by onsemi.
Description
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low r DS(on) and gate charge provide excellent switching performance.
Features
- Max r DS(on) = 243 m W at VGS = 10 V, ID = 2.2 A
- Max r DS(on) = 366 m W at VGS = 4.5 V, ID = 1.8 A
- Low Profile
- 0.8 mm Maximum in the New Package Micro FETt
2 x 2 mm
- Free from Halogenated pounds and Antimony Oxides
- This Device is Pb- Free and is Ro HS pliant
Application
- DC- DC Buck Converters
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current
- Continuous TA = 25°C
(Note 1a)
±20
- Pulsed (Note 3)
PD Power dissipation TA = 25°C (Note 1a)
Power dissipation TA = 25°C (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 to °C +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Rq JA Thermal Resistance, Junction- to- Ambient (Note 1a)
Rq JA Thermal Resistance, Junction- to- Ambient (Note...
