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FDMA86108LZ - N-Channel MOSFET

Datasheet Summary

Description

thermal performance for synchronous buck converters.

The low rDS(on) and gate charge provide excellent switching performance.

Features

  • Max rDS(on) = 243 mW at VGS = 10 V, ID = 2.2 A.
  • Max rDS(on) = 366 mW at VGS = 4.5 V, ID = 1.8 A.
  • Low Profile.
  • 0.8 mm Maximum in the New Package MicroFETt 2 x 2 mm.
  • Free from Halogenated Compounds and Antimony Oxides.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FDMA86108LZ
Manufacturer ON Semiconductor
File Size 270.26 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMA86108LZ Datasheet
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Full PDF Text Transcription

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MOSFET – Single N-Channel, POWERTRENCH) 100 V, 2.2 A, 243 mW FDMA86108LZ General Description This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance. Features • Max rDS(on) = 243 mW at VGS = 10 V, ID = 2.2 A • Max rDS(on) = 366 mW at VGS = 4.5 V, ID = 1.8 A • Low Profile − 0.
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