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FDMA86108LZ - MOSFET

General Description

Max rDS(on) = 243 mΩ at VGS = 10 V, ID = 2.2 A Max rDS(on) = 366 mΩ at VGS = 4.5 V, ID = 1.8 A Low Profile - 0.8 mm Maximum in the New Package MicroFET 2x2 mm Free from Halogenated Compounds and Antimony Oxides RoHS Compliant This device has been designed to provide maximum efficiency and thermal

Key Features

  • General.

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FDMA86108LZ Single N-Channel PowerTrench® MOSFET March 2015 FDMA86108LZ Single N-Channel PowerTrench® MOSFET 100 V, 2.2 A, 243 mΩ Features General Description Max rDS(on) = 243 mΩ at VGS = 10 V, ID = 2.2 A Max rDS(on) = 366 mΩ at VGS = 4.5 V, ID = 1.8 A Low Profile - 0.8 mm Maximum in the New Package MicroFET 2x2 mm Free from Halogenated Compounds and Antimony Oxides RoHS Compliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.