FDMA908PZ
Overview
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD.
- Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A
- Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A
- Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A
- Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
- HBM ESD protection level > 2.8 kV typical (Note 3)
- Free from halogenated compounds and antimony oxides
- RoHS Compliant
