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FDMA908PZ - MOSFET

General Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.

Key Features

  • Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A.
  • Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A.
  • Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A.
  • Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm.
  • HBM ESD protection level > 2.8 kV typical (Note 3).
  • Free from halogenated compounds and antimony oxides.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMA908PZ Single P-Channel PowerTrench® MOSFET FDMA908PZ Single P-Channel PowerTrench® MOSFET February 2014 -12 V, -12 A, 12.5 mΩ Features „ Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A „ Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A „ Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A „ Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm „ HBM ESD protection level > 2.8 kV typical (Note 3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD.