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FDMB2308PZ - MOSFET

General Description

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications.

Key Features

  • Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A.
  • Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A.
  • Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm.
  • HBM ESD protection level 2.8 kV (Note 3).
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMB2308PZ Dual Common Drain P-Channel PowerTrench® MOSFET FDMB2308PZ April 2014 Dual Common Drain P-Channel PowerTrench® MOSFET -20 V, -7 A, 36 mΩ Features „ Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A „ Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A „ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm „ HBM ESD protection level 2.8 kV (Note 3) „ RoHS Compliant General Description This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on).