mosfet.
* Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A
* Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A
* Low Profile - 0.8 mm maximum - in the new package
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It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced Power.
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild.
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