FDMB2308PZ Datasheet (PDF) Download
Fairchild Semiconductor
FDMB2308PZ

Description

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two mon drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on).

Key Features

  • Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A
  • Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A
  • 0.8 mm maximum
  • in the new package MicroFET 2x3 mm
  • HBM ESD protection level 2.8 kV (Note
  • RoHS compliant