FDMC2514SDC
Features
- Dual Cool TM Top Side Cooling PQFN package
- Max r DS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A
- Max r DS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
- High performance technology for extremely low r DS(on)
- Sync FET Schottky Body Diode
- Ro HS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool TM package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Applications
- Synchronous Rectifier for DC/DC Converters
- Tele Secondary Side Rectification
- High End Server/Workstation Vcore Low Side
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