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FDMC2514SDC - Dual N-Channel MOSFET

Key Features

  • Dual CoolTM Top Side Cooling PQFN package.
  • Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A.
  • Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A.
  • High performance technology for extremely low rDS(on).
  • SyncFET Schottky Body Diode.
  • RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) wh.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC2514SDC N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM FDMC2514SDC N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM 25 V, 40 A, 3.5 mΩ General Description Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A „ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.