FDMC2512SDC Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient . This device has the added benefit of an efficient monolithic Schottky body diode.
FDMC2512SDC Key Features
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 27 A
- Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 22 A
- High performance technology for extremely low rDS(on)
- SyncFET Schottky Body Diode
- RoHS pliant