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FDMC2512SDC - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Key Features

  • Dual CoolTM Top Side Cooling PQFN package.
  • Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 27 A.
  • Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 22 A.
  • High performance technology for extremely low rDS(on).
  • SyncFET Schottky Body Diode.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC2512SDC N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM July 2015 FDMC2512SDC N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM 25 V, 40 A, 2.0 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.