Datasheet4U Logo Datasheet4U.com

FDMC2610 - N-Channel UltraFET Trench MOSFET

Description

This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.

It has been optimized for power management applications.

Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A Low Profile - 1mm m

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDMC2610

Datasheet Details

Part number FDMC2610
Manufacturer Fairchild Semiconductor
File Size 389.96 KB
Description N-Channel UltraFET Trench MOSFET
Datasheet download datasheet FDMC2610 Datasheet
Additional preview pages of the FDMC2610 datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ Features General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. „ Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A „ Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A „ Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm „ RoHS Compliant tm Application „ DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 7 G S S S 4 3 2 1 4 3 2 1 8 MLP 3.3x3.
Published: |