FDMC2610 Description
This N−Channel MOSFET is a rugged gate version of onsemi‘s advanced POWERTRENCH® process. It has been optimized for power management applications.
FDMC2610 Key Features
- Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A
- Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A
- Low Profile
- 1 mm Max in a Power 33
- Pb-Free, Halide Free and RoHS pliant