FDMC2610 - N-Channel MOSFET

onsemi

General Description

This N

advanced POWERTRENCH® process.

It has been optimized for power management applications.

Key Features

Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A.
Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A.
Low Profile.
1 mm Max in a Power 33.
Pb.
Free, Halide Free and RoHS Compliant.

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FDMC2610 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC2610
Manufacturer	onsemi
File Size	315.51 KB
Description	N-Channel MOSFET
Datasheet	FDMC2610 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UltraFET Trench 200 V, 9.5 A, 200 mW FDMC2610 General Description This N−Channel MOSFET is a rugged gate version of onsemi‘s advanced POWERTRENCH® process. It has been optimized for power management applications. Features • Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A • Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A • Low Profile − 1 mm Max in a Power 33 • Pb−Free, Halide Free and RoHS Compliant Applications • DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 200 V VGS Gate to Source Voltage ±20 V ID Drain Current: A Continuous (Silicon limited) TC = 25°C 9.5 Continuous (Note 1a) TA = 25°C 2.