Datasheet Details
| Part number | FDMC2610 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 389.96 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet | FDMC2610_FairchildSemiconductor.pdf |
|
|
Overview: www.DataSheet4U.com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.
| Part number | FDMC2610 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 389.96 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet | FDMC2610_FairchildSemiconductor.pdf |
|
|
|
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for power management applications.
Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm RoHS Compliant tm Application DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 7 G S S S 4 3 2 1 4 3 2 1 8 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage -Continuous (Silicon limited) Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TA = 25°C (Note 1a) Ratings 200 ±20 9.5 2.2 15 42 2.1 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 °C/W Package Marking and Ordering Information Device Marking FDMC2610 Device FDMC2610 Package MLP3.3X3.3 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMC2610 Rev.B 1 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 160V, VGS = 0V TJ = 125°C VGS = ±20V, VGS = 0V 200 199 1 10 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC2610 | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDMC2674 | N-Channel UltraFET Trench MOSFET |
| FDMC2512SDC | N-Channel MOSFET |
| FDMC2514SDC | N-Channel Dual Cool PowerTrench SyncFET |
| FDMC2523P | P-Channel QFET |
| FDMC0310AS | MOSFET |
| FDMC15N06 | N-Channel MOSFET |
| FDMC3020DC | N-Channel Dual Cool PowerTrench MOSFET |
| FDMC3300NZA | N-Channel MOSFET |
| FDMC3612 | N-Channel Power Trench MOSFET |
| FDMC4435BZ | MOSFET |