FDMC3300NZA mosfet equivalent, n-channel mosfet.
* RDS(ON) = 26mΩ @ VGS = 4.5 V, ID = 8A
* RDS(ON) = 34mΩ @ VGS = 2.5 V, ID = 7A
* >2000V ESD protection
* Low Profile-1mm maxium-in the new package MicroF.
* Li-lon Battery Pack
LE
A
REE I DF
D1
D1
D2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol .
This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on)@VGS=2.5v on special MicroFET leadframe with all the drains on one side of the package.
Features
* RDS(ON) = 26mΩ @.
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