FDMC3300NZA
Overview
This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on)@VGS=2.5v on special MicroFET leadframe with all the drains on one side of the package.
- RDS(ON) = 26mΩ @ VGS = 4.5 V, ID = 8A
- RDS(ON) = 34mΩ @ VGS = 2.5 V, ID = 7A
- >2000V ESD protection
- Low Profile-1mm maxium-in the new package MicroFET 3.3x3.3 mm
- Pb-free and RoHS Compliant
