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FDMC3300NZA - N-Channel MOSFET

General Description

This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on)@VGS=2.5v on special MicroFET leadframe with all the drains on one side of the package.

Key Features

  • RDS(ON) = 26mΩ @ VGS = 4.5 V, ID = 8A.
  • RDS(ON) = 34mΩ @ VGS = 2.5 V, ID = 7A.
  • >2000V ESD protection.
  • Low Profile-1mm maxium-in the new package MicroFET 3.3x3.3 mm.
  • Pb-free and RoHS Compliant.

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www.DataSheet4U.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET December 2005 FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET 8A,20V,26mΩ General Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on)@VGS=2.5v on special MicroFET leadframe with all the drains on one side of the package. Features „ RDS(ON) = 26mΩ @ VGS = 4.5 V, ID = 8A „ RDS(ON) = 34mΩ @ VGS = 2.5 V, ID = 7A „ >2000V ESD protection „ Low Profile-1mm maxium-in the new package MicroFET 3.3x3.