FDMC7200S
Description
This device includes two specialized N-Channel MOSFETs in a dual power33 (3mm X 3mm MLP) package.
Key Features
- Q1: N-Channel
- Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A
- Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel
- Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A
- Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A
