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FDMC7200 - Dual N-Channel MOSFET

General Description

This device includes two specialized N

dual Power 33 (3 mm x 3 mm MLP) package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Key Features

  • Q1: N.
  • Channel.
  • Max RDS(on) = 23.5 mW at VGS = 10 V, ID = 6 A.
  • Max RDS(on) = 38 mW at VGS = 4.5 V, ID = 5 A.
  • Q2: N.
  • Channel.
  • Max RDS(on) = 12 mW at VGS = 10 V, ID = 8 A.
  • Max RDS(on) = 18 mW at VGS = 4.5 V, ID = 7 A.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDMC7200
Manufacturer onsemi
File Size 348.84 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMC7200 Datasheet

Full PDF Text Transcription for FDMC7200 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDMC7200. For precise diagrams, and layout, please refer to the original PDF.

MOSFET – Dual, N-Channel, POWERTRENCH) 30 V, 12 mW and 23.5 mW FDMC7200 General Description This device includes two specialized N−Channel MOSFETs in a dual Power 33 (3 m...

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ice includes two specialized N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Features • Q1: N−Channel ♦ Max RDS(on) = 23.5 mW at VGS = 10 V, ID = 6 A ♦ Max RDS(on) = 38 mW at VGS = 4.5 V, ID = 5 A • Q2: N−Channel ♦ Max RDS(on) = 12 mW at VGS = 10 V, ID = 8 A ♦ Max RDS(on) = 18 mW at VGS = 4.