Q1: N-Channel
Max rDS(on) = 23.5 mΩ at VGS = 10 V, ID = 6 A
Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5 A
Q2: N-Channel
Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 8 A
Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7 A
RoHS Compliant
This device includes two
Full PDF Text Transcription for FDMC7200 (Reference)
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FDMC7200 Dual N-Channel PowerTrench® MOSFET FDMC7200 June 2009 Dual N-Channel PowerTrench® MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel Max...
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V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel Max rDS(on) = 23.5 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7 A RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
FDMC7200 Datasheet
