FDMC7200
Features
General Description
Q1: N-Channel
- Max r DS(on) = 23.5 mΩ at VGS = 10 V, ID = 6 A
- Max r DS(on) = 38 mΩ at VGS = 4.5 V, ID = 5 A
Q2: N-Channel
- Max r DS(on) = 12 mΩ at VGS = 10 V, ID = 8 A
- Max r DS(on) = 18 mΩ at VGS = 4.5 V, ID = 7 A
- Ro HS pliant
This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
Applications
- Mobile puting
- Mobile Internet Devices
- General Purpose Point of Load
Pin 1
D1 D1 D1 G1
D1 D2/S1
S2 S2 S2 G2
VIN VIN VIN
SWITCH
NODE
GND GND GND GLS
BOTTOM
BOTTOM
Power 33
S2 5 S2 6 S2 7 G2 8
Q2
4 D1 3 D1 2 D1 Q1 1 G1
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS
PD TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current...
