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FDMC7200S - Dual N-Channel PowerTrench MOSFETs

General Description

This device includes two specialized N-Channel MOSFETs in a dual power33 (3mm X 3mm MLP) package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A.
  • Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel.
  • Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A.
  • Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A.
  • RoHS Compliant General.

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Full PDF Text Transcription for FDMC7200S (Reference)

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FDMC7200S Dual N-Channel PowerTrench® MOSFETs FDMC7200S June 2014 Dual N-Channel PowerTrench® MOSFETs 30 V, 22 mΩ, 10 mΩ Features Q1: N-Channel „ Max rDS(on) = 22 mΩ at V...

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s 30 V, 22 mΩ, 10 mΩ Features Q1: N-Channel „ Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A „ Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual power33 (3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

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