Datasheet4U Logo Datasheet4U.com

FDMC7672 Datasheet N-channel Power Trench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMC7672 N-Channel Power Trench® MOSFET June 2014 FDMC7672 N-Channel Power Trench® MOSFET 30 V, 16.9 A, 5.

General Description

„ Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A „ Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.

Application „ DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Top Bottom Pin 1 SS S G MLP 3.3x3.3 D D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 20 16.9 50 144 33 2.3 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 3.7 53 °C/W Device Marking FDMC7672 Device FDMC7672 Package MLP 3.3x3.3 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDMC7672 Rev.C5 1 .fairchildsemi.

Key Features

  • General.

FDMC7672 Distributor