FDMC7672 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDMC7672 Key Features
- Max RDS(on) = 5.7 mW at VGS = 10 V, ID = 16.9 A
- Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15.0 A
- High Performance Technology for Extremely Low RDS(on)
- Pb-Free, Halide Free and RoHS pliant