FDMC7672 - N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Key Features

Max RDS(on) = 5.7 mW at VGS = 10 V, ID = 16.9 A.
Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15.0 A.
High Performance Technology for Extremely Low RDS(on).
Pb.
Free, Halide Free and RoHS Compliant.

📥 Download Datasheet

FDMC7672 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC7672
Manufacturer	onsemi
File Size	300.98 KB
Description	N-Channel MOSFET
Datasheet	FDMC7672 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FDMC7672	N-Channel Power Trench MOSFET	Fairchild Semiconductor
FDMC7672S	N-Channel Power MOSFET	Fairchild Semiconductor
FDMC7678	N-Channel MOSFET	Fairchild Semiconductor
FDMC7660	N-Channel PowerTrench MOSFET	Fairchild Semiconductor
FDMC7660DC	N-Channel Dual Cool 33 PowerTrenc MOSFET	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FDMC7672S	N-Channel MOSFET
FDMC7678	N-Channel MOSFET
FDMC7660	N-Channel MOSFET
FDMC7660DC	N-Channel MOSFET
FDMC7660S	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOSFET – N-Channel, POWERTRENCH) 30 V, 16.9 A, 5.7 mW FDMC7672 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max RDS(on) = 5.7 mW at VGS = 10 V, ID = 16.9 A • Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15.