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FDMC7672 - N-Channel Power Trench MOSFET

General Description

Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDMC7672 N-Channel Power Trench® MOSFET June 2014 FDMC7672 N-Channel Power Trench® MOSFET 30 V, 16.9 A, 5.7 mΩ Features General Description „ Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A „ Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application „ DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Top Bottom Pin 1 SS S G MLP 3.3x3.