FDMC7672 Description
Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and...
FDMC7672 Key Features
- Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A
- Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant