FDMC7672 Datasheet | Fairchild Semiconductor

FDMC7672 N-Channel Power Trench® MOSFET June 2014 N-Channel Power Trench® MOSFET 30 V, 16.9 A, 5.7 mΩ Features General Description - Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A - Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A - High performance technology for extremely low rDS(on) - Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Application - DC - DC Buck Converters -...