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FDMC7672S - N-Channel Power MOSFET

General Description

September 2010 Max rDS(on) = 6.0 m: at VGS = 10 V, ID = 14.8 A Max rDS(on) = 7.1 m: at VGS = 4.5 V, ID = 12.4 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This FDMC7672S is produced using Fairchild Semi

Key Features

  • General.

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FDMC7672S N-Channel Power Trench® SyncFETTM FDMC7672S N-Channel Power Trench® SyncFETTM 30 V, 14.8 A, 6.0 m: Features General Description September 2010 „ Max rDS(on) = 6.0 m: at VGS = 10 V, ID = 14.8 A „ Max rDS(on) = 7.1 m: at VGS = 4.5 V, ID = 12.4 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This FDMC7672S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery packs. Applications „ DC - DC Buck Converters „ Notebook battery power mangement „ Load switch in Notebook Top Bottom Pin 1 S SG S MLP 3.