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FDMC8200S - MOSFET

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General Description

This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

Overview

FDMC8200S Dual N-Channel PowerTrench® MOSFET March 2011 FDMC8200S Dual N-Channel PowerTrench® MOSFET 30 V, 10 mΩ, 20.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A.
  • Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel.
  • Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A.
  • Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A.
  • RoHS Compliant General.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDMC8200S Dual N-Channel MOSFET ON Semiconductor
ON Semiconductor Logo FDMC8200 Dual N-Channel MOSFET ON Semiconductor

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