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FDMC8200S - Dual N-Channel MOSFET

Datasheet Summary

Description

This device includes two specialized N

dual Power33 (3 mm x 3 mm MLP) package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 20 mW at VGS = 10 V, ID = 6 A.
  • Max rDS(on) = 32 mW at VGS = 4.5 V, ID = 5 A.
  • Q2: N.
  • Channel.
  • Max rDS(on) = 10 mW at VGS = 10 V, ID = 8.5 A.
  • Max rDS(on) = 13.5 mW at VGS = 4.5 V, ID = 7.2 A.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet preview – FDMC8200S

Datasheet Details

Part number FDMC8200S
Manufacturer ON Semiconductor
File Size 330.40 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMC8200S Datasheet
Additional preview pages of the FDMC8200S datasheet.

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Full PDF Text Transcription

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MOSFET – Dual, N-Channel, POWERTRENCH) 30 V, 10 mW, 20 mW FDMC8200S General Description This device includes two specialized N−Channel MOSFETs in a dual Power33 (3 mm x 3 mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Features • Q1: N−Channel ♦ Max rDS(on) = 20 mW at VGS = 10 V, ID = 6 A ♦ Max rDS(on) = 32 mW at VGS = 4.5 V, ID = 5 A • Q2: N−Channel ♦ Max rDS(on) = 10 mW at VGS = 10 V, ID = 8.5 A ♦ Max rDS(on) = 13.5 mW at VGS = 4.5 V, ID = 7.
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